Continuum Modeling for Epitaxial Growth by Russel E. Caflisch, UCLA JTB 120, 3:20pm Monday, January 12, 1998 ABSTRACT This talk will address modeling and simulation for the epitaxial growth of thin films, particularly by molecular beam epitaxy. The intended applications are for barrier layers in quantum devices that are used in high speed applications, such as wireless communication. Previous models for epitaxial growth has involved either rate equations or coarse-grained models such as the KPZ equation. Rate equations are only valid during the pre-coallescent phase of epitaxial growth. KPZ and related equations are only valid for rather thick films. We propose a new approach in which the problem is coarse-grained in the lateral directions, but discrete in the growth direction. The growth is then described through the dynamics of the islands, which are regions in which the crystal is one layer higher than in the surrounding region. Using a mean field approach we derive a formula for the velocity of an island boundary. Results from this model are compared to the results from kinetic Monte Carlo. Request for preprints and reprints to milton@math.utah.edu. This information can be found at http://www.math.utah.edu/research/